• EFFECT OF ANNEALING OF ZnSe:Cr CRYSTALS IN Bi(Zn) MELT ON THE INTENSITY OF RADIATION BANDS OF Cr IONS 

  Kulyuk, Leonid; Nedeoglo, Dumitru; Siminel, Anatolii; Sushkevich, Constantin (2010)

  The photoluminescence in visible and near-IR spectral range of ZnSe:Cr as-grown and annealed in Bi(Zn) melt crystals was investigaded at room temperature. It was established that heat treatment of the crystals in Bi melt ...
• PREPARATION OF NANOCOMPOSITE CADMIUM SULFIDE IN A POLYMER MATRIX 

  Goglidze, Tatiana; Gutsul, Tatiana; Dementev, Igor; Petrenko, Piotr (2010)

  A technique for formation of CdS nanocrystals in a Sevilen polymeric matrix by the cluspol method is proposed. The optimum conditions of synthesis of CdS nanocrystals are found. The crystallite sizes are estimated using ...
• PHOTOLUMINESCENCE OF Bi 2 O 3 -InSe HETEROJUNCTIONS 

  Evtodiev, Igor (2009)

  Optical and photoelectrical properties from the immediate proximity of the band gap in the strongly anisotropic crystals constitute a major technical interest. The stratified structure specific of AIIIBVI group ...
• EXCITONIC ABSORPTION OF THE LIGHT IN HETEROJUNCTIONS Bi 2 O 3 -InSe 

  Evtodiev, Igor (2009)

  The interface layer of the Bi2O3/InSe:Cd (0.10 at. %) heterojunction was investigated using optical and electroreflection spectra. The fundamental absorption edge of InSe:Cd interface layer, at 78 K, is formed ...
• DEVELOPMENT OF DISSIPATIVE STRUCTURES ON SURFACE OF DIELECTRIC LIQUID IN ELECTROSTATIC FIELD 

  Constntinov, Boris; Bocan, V.; Pasechnic, Teodosie; Untila, Pantelei (2005)

  The transition of plane surface of liquid dielectric charged with the electrical charge in the electrostatic field in the periodical gofer surface of crater type deformation is researched. It was proved for the first ...
• SIMULATION ET MODELISATION DE LA VARIATION DE LA MOBILITE DE HALL DES PHOTOELECTRONS EN FONCTION DE LA TEMPERATURE DANS LES CRISTAUX DE n-ZnSe :Zn IRRADIES AVEC DES ELECTRONS ENERGETIQUES 

  Djouadi, D.; Boughiden, B.; Chelouche, A.; Nedeoglo, Dumitru (Université Mentouri, 2007)

  Dans l’intervalle de températures [77..300 K] a été mesurée la mobilité de Hall des électrons d’équilibre et des photoélectrons dans les cristaux de n-ZnSe :Zn irradiés avec un faisceau d’électrons d’énergie E=1,3 MeV et ...
• OPTICAL AND PHOTOELECTRICAL CHARACTERISTICS OF GaSe (Cu)/OXIDE SEMICONDUCTOR HETEROJUNCTION 

  Evtodiev, Igor; Cuculescu, E.; Arama, E.; Caraman, Mihail (2008)

  The AIIIBVI layered semiconductors are perspective materials for photoelectrical and luminescent device fabrication, for use in visible and near IR spectral region [1, 2]. GaSe and InSe semiconductors, having the ...
• SOME OPTICAL PROPERTIES OF GaSe CRYSTALS DOPED WITH ELEMENTS OF GROUP I (Li AND K) 

  Caraman, Mihail; Evtodiev, Igor; Cuculescu, E. (2008)

  Alkaline solutions of the Li, K, andNa are used in electrical accumulators. The accumulating capacity is considerably higher comparing to technical accumulators if the principle of intercalation of the metals of group I ...
• GROWTH TECHNOLOGY FOR ZnSe SINGLE CRYSTALS WITH LOW DISLOCATION DENSITY 

  Colibaba, Gleb; Nedeoglo, Dumitru (2008)

  The influence of the growth temperature, undercooling, growth rate as well as growth chamber construction and furnace temperature profile on the structural perfection of the crystals grown by both physical and chemical ...
• ELECTRON COLLISION RATE AND MULTIQUANTUM TRANSITIONS IN SOLIDS 

  Klyukanov, A.; Catanoi, A.; Petrushca, A.; Awawdeh, A. (2008)

  Multiquantum integral kinetic equation for the longitudinal complex dielectric function is derived. Heisenberg equation of motion and fluctuation-dissipation theorem has been used to calculate multiplasmon transmission ...
• INVESTIGATION OF ENERGETIC STATES, DETERMINED BY Cu AND Cd IMPURITY ATOMS, AT SURFACE OF GaS AND GaSe MONOCRYSTALLINE LAYERS 

  Evtodiev, Igor; Cuculescu, E.; Postolachi, Vitalie; Caraman, Mihail (2007)

  The reflection, absorption, photoconductivity, and thermally stimulated luminescence (TSL) spectra of GaS:Cu and GaSe:Cu, Cd single crystals have been studied. As a result of these investigations, the energy ...
• EXCITONIC AND RADIATIVE EFFECTS IN GaSe-C 60 STRUCTURES 

  Evtodiev, Igor; Lozovanu, Petru; Cuculescu, E.; Caraman, Mihail (2007)

  The absorption and photoluminescence spectra of GaSe intercalated in C60 fullerene has been investigated at 293 K and 78 K. C60 and C60-toluene molecules intercalated in-between GaSe stratified “packing” cause the ...
• SCIENTIFIC TREASURY CREATED BY PROFESSOR E.P. POKATILOV 

  Fomin, V.M. (2007)

  The brilliant creative activity of Professor Evgenii Petrovich Pokatilov, Associate member of the Academy of Sciences of Moldova, member of the Academy of Natural Sciences of Russia, winner of the State Prize of ...
• PHOTOVOLTAIC MINIMODULE BASED ON CdTe 

  Potlog, Tamara; Ghimpu, Lidia; Balan, Ion (2006)

  CdS/CdTe solar cells were fabricated without antireflection coatings by successive growth without intermediate processing from the close space sublimation of CdS and CdTe thin layers on conductive ...
• OMPUTATIONAL STUDY OF NON-STATIONARY CLUSTER SIZE DISTRIBUTION AND RATE OF NUCLEATION IN CASE OF PRE-EXISTING CLUSTERS 

  Gamurari, Visarion; Paladi, Florentin; Eremeev, Vitalie; Al-Sabayleh, Moayad Abidalraheem Obid (2006)

  he dynamics of a cluster-type system formed by constant total number of molecules, M, is studied when clusters change their sizes by nearest-size transitions (the Szilard model) with time-dependent boundary ...
• PHOTOLUMINESCENCE OF n-ZnSe SINGLE CRYSTALS DOPED WITH IODINE BY VAPOUR PHASE DIFFUSION 

  Avdonin, A.N.; Nedeoglo, D.D.; Nedeoglo, N.D.; Sirkeli, V.P.; Ivanova, G.N. (2006)

  Photoluminescence spectra of n-ZnSe single crystals doped with iodine are investigated in the temperature range from 83 to 300 K. It is shown that the edge PL band is formed by overlapping of the ...
• KINETICS OF PHOTOCONDUCTIVITY AND PHOTOLUMINESCENCE OF CdS/CdTe HETEROJUNCTIONS 

  Vatavu, Sergiu; Caraman, Iuliana; Gasin, Petru (2005)

  The photoluminescence and absoption spectral distribution close to the edge of fundamental band were studied in the CdS and CdTe films components of the CdS/CdTe heterojunctions. Recombination level energetic position ...
• IMPURITY DISTRIBUTION IN n-ZnSe CRYSTALS DOPED WITH Au 

  Nedeoglo, D.D.; Nedeoglo, N.D.; Sirkeli, V.P. (2005)

  Hall effect, electric conductivity and mobility of charge carriers in n-ZnSe single crystals doped with Au are investigated in the temperature range from 77 to 300 K. Impurity distribution in the crystals was studied by ...
• POLARON STATES AT ARBITRARY COUPLING REGIMES IN RECTANGULAR POTENTIAL WELL 

  Pokatilov, E.P.; Andrieș, M.I.; Barsuk, A.A. (2005)

  We report here a new approach to the confined polaron problem at arbitrary coupling regimes. It is shown, that developed theory permits calculation of polaron energy without use of parabolic potential barriers.
• STUDY OF RECOMBINATION MECHANISMS IN CRYSTALS GaSe DOPED WITH Cu, Cd AND Sn 

  Evtodiev, Igor; Cuculescu, Elvira; Rusu, Marin; Caraman, Mihail (2005)

  The stratified crystals of GaSe type serve as the basic element in different optoelectronic devices such as the micro lasers (the excitation with the electron beam), optoelectronic ...

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