• SIMULATION ET MODELISATION DE LA VARIATION DE LA MOBILITE DE HALL DES PHOTOELECTRONS EN FONCTION DE LA TEMPERATURE DANS LES CRISTAUX DE n-ZnSe :Zn IRRADIES AVEC DES ELECTRONS ENERGETIQUES 

  Djouadi, D.; Boughiden, B.; Chelouche, A.; Nedeoglo, Dumitru (Université Mentouri, 2007)

  Dans l’intervalle de températures [77..300 K] a été mesurée la mobilité de Hall des électrons d’équilibre et des photoélectrons dans les cristaux de n-ZnSe :Zn irradiés avec un faisceau d’électrons d’énergie E=1,3 MeV et ...
• OPTICAL AND PHOTOELECTRICAL CHARACTERISTICS OF GaSe (Cu)/OXIDE SEMICONDUCTOR HETEROJUNCTION 

  Evtodiev, Igor; Cuculescu, E.; Arama, E.; Caraman, Mihail (2008)

  The AIIIBVI layered semiconductors are perspective materials for photoelectrical and luminescent device fabrication, for use in visible and near IR spectral region [1, 2]. GaSe and InSe semiconductors, having the ...
• SOME OPTICAL PROPERTIES OF GaSe CRYSTALS DOPED WITH ELEMENTS OF GROUP I (Li AND K) 

  Caraman, Mihail; Evtodiev, Igor; Cuculescu, E. (2008)

  Alkaline solutions of the Li, K, andNa are used in electrical accumulators. The accumulating capacity is considerably higher comparing to technical accumulators if the principle of intercalation of the metals of group I ...
• GROWTH TECHNOLOGY FOR ZnSe SINGLE CRYSTALS WITH LOW DISLOCATION DENSITY 

  Colibaba, Gleb; Nedeoglo, Dumitru (2008)

  The influence of the growth temperature, undercooling, growth rate as well as growth chamber construction and furnace temperature profile on the structural perfection of the crystals grown by both physical and chemical ...
• ELECTRON COLLISION RATE AND MULTIQUANTUM TRANSITIONS IN SOLIDS 

  Klyukanov, A.; Catanoi, A.; Petrushca, A.; Awawdeh, A. (2008)

  Multiquantum integral kinetic equation for the longitudinal complex dielectric function is derived. Heisenberg equation of motion and fluctuation-dissipation theorem has been used to calculate multiplasmon transmission ...
• INVESTIGATION OF ENERGETIC STATES, DETERMINED BY Cu AND Cd IMPURITY ATOMS, AT SURFACE OF GaS AND GaSe MONOCRYSTALLINE LAYERS 

  Evtodiev, Igor; Cuculescu, E.; Postolachi, Vitalie; Caraman, Mihail (2007)

  The reflection, absorption, photoconductivity, and thermally stimulated luminescence (TSL) spectra of GaS:Cu and GaSe:Cu, Cd single crystals have been studied. As a result of these investigations, the energy ...
• EXCITONIC AND RADIATIVE EFFECTS IN GaSe-C 60 STRUCTURES 

  Evtodiev, Igor; Lozovanu, Petru; Cuculescu, E.; Caraman, Mihail (2007)

  The absorption and photoluminescence spectra of GaSe intercalated in C60 fullerene has been investigated at 293 K and 78 K. C60 and C60-toluene molecules intercalated in-between GaSe stratified “packing” cause the ...
• SCIENTIFIC TREASURY CREATED BY PROFESSOR E.P. POKATILOV 

  Fomin, V.M. (2007)

  The brilliant creative activity of Professor Evgenii Petrovich Pokatilov, Associate member of the Academy of Sciences of Moldova, member of the Academy of Natural Sciences of Russia, winner of the State Prize of ...
• PHOTOVOLTAIC MINIMODULE BASED ON CdTe 

  Potlog, Tamara; Ghimpu, Lidia; Balan, Ion (2006)

  CdS/CdTe solar cells were fabricated without antireflection coatings by successive growth without intermediate processing from the close space sublimation of CdS and CdTe thin layers on conductive ...
• OMPUTATIONAL STUDY OF NON-STATIONARY CLUSTER SIZE DISTRIBUTION AND RATE OF NUCLEATION IN CASE OF PRE-EXISTING CLUSTERS 

  Gamurari, Visarion; Paladi, Florentin; Eremeev, Vitalie; Al-Sabayleh, Moayad Abidalraheem Obid (2006)

  he dynamics of a cluster-type system formed by constant total number of molecules, M, is studied when clusters change their sizes by nearest-size transitions (the Szilard model) with time-dependent boundary ...
• PHOTOLUMINESCENCE OF n-ZnSe SINGLE CRYSTALS DOPED WITH IODINE BY VAPOUR PHASE DIFFUSION 

  Avdonin, A.N.; Nedeoglo, D.D.; Nedeoglo, N.D.; Sirkeli, V.P.; Ivanova, G.N. (2006)

  Photoluminescence spectra of n-ZnSe single crystals doped with iodine are investigated in the temperature range from 83 to 300 K. It is shown that the edge PL band is formed by overlapping of the ...
• KINETICS OF PHOTOCONDUCTIVITY AND PHOTOLUMINESCENCE OF CdS/CdTe HETEROJUNCTIONS 

  Vatavu, Sergiu; Caraman, Iuliana; Gasin, Petru (2005)

  The photoluminescence and absoption spectral distribution close to the edge of fundamental band were studied in the CdS and CdTe films components of the CdS/CdTe heterojunctions. Recombination level energetic position ...
• IMPURITY DISTRIBUTION IN n-ZnSe CRYSTALS DOPED WITH Au 

  Nedeoglo, D.D.; Nedeoglo, N.D.; Sirkeli, V.P. (2005)

  Hall effect, electric conductivity and mobility of charge carriers in n-ZnSe single crystals doped with Au are investigated in the temperature range from 77 to 300 K. Impurity distribution in the crystals was studied by ...
• POLARON STATES AT ARBITRARY COUPLING REGIMES IN RECTANGULAR POTENTIAL WELL 

  Pokatilov, E.P.; Andrieș, M.I.; Barsuk, A.A. (2005)

  We report here a new approach to the confined polaron problem at arbitrary coupling regimes. It is shown, that developed theory permits calculation of polaron energy without use of parabolic potential barriers.
• STUDY OF RECOMBINATION MECHANISMS IN CRYSTALS GaSe DOPED WITH Cu, Cd AND Sn 

  Evtodiev, Igor; Cuculescu, Elvira; Rusu, Marin; Caraman, Mihail (2005)

  The stratified crystals of GaSe type serve as the basic element in different optoelectronic devices such as the micro lasers (the excitation with the electron beam), optoelectronic ...
• OPTICAL PROPERTIES OF CRYSTALS GaSe AND InSe DOPED WITH Cu 

  Evtodiev, Igor; Cuculescu, Elvira; Caraman, Mihail; Anghel, Sergiu; Petrov, M. (2005)

  The anisotropy of absorption spectra in the range of the margin of fundamental band of the crystals GaSe and InSe doped with Cu in the percentage quantities up to 0.5 % at. from which the implementation mechanism of ...
• LASER GAIN SPECTRA OF QUANTUM WELLS AND MULTIPLASMON OPTICAL TRANSITIONS 

  Gurau, Virginia (2005)

  A novel multi-plasmon concept of a light absorption and laser gain of low- dimensional structures are comprehensively discussed. A Generalized Semiconductor Bloch Equations ...
• ELLIPSOMETRIC STUDIES OF NANOMETRIC CdS AND CdTe FILMS 

  Caraman, Mihail; Evtodiev, Igor; Cuculescu, Elmira; Rusu, Marin; Salaoru, Iurie (2005)

  The thickness of the layers CdS and CdTe grown on the Si, Ge, GaAs was determined from the analysis of the polarization ellipse of the reflected light from the surfaces of structures thin layers ...
• PLASMA TREATMENT AND SURFACE SENSIBILIZATION OF TIN DIOXIDE FILMS FOR ENHANCEMENT OF GAS SENSITIVITY 

  Brînzari, Vladimir; Dmitriev, Serghei; Korotchenkov, Ghenadie (2005)

  This paper presents result of investigation aimed at the improvement of gas sensitive properties of SnO2 thin film gas sensors (TFGS) by means of high frequency (HF) oxygen ...
• MODELING OF TEMPERATURE REGIMES OF THIN FILM GAS SENSITIVE DEVICES 

  Dmitriev, Serghei (2005)

  This paper presents results of the modeling of the temperature distribution in a chip of thin film gas sensor, operating at high temperatures (150-1000 oC), required to provide ...

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