Abstract:
Structural and optical properties of ZnTe thin films fabricated by close space sublimation method with different thicknesses are investigated. It was evidenced a relatively small variation of the lattice parameter with increasing the thickness of the layers, starting from the value of 6.1052 Å (0.83 μm) to 6.1047 Å (2.59 μm). With the varying of the thickness the value of the band gap is changed from 2.237 eV up to 2. 243 eV. The photovoltaic devices ZnSe/ZnTe with efficiency of 1.69 % was obtained.
