Abstract:
Photoluminescence (PL) spectra of ZnSe:0.1at%Sb single crystals are studied between
90 and 300 K. The samples are grown by the chemical vapor transport (CVT) method with iodine
as a transport agent and doped with Sb impurity during the growth. A yellow PL band with a
maximum at 2.16 eV (575 nm) at room temperature is observed for the first time. A model of a
(SbSeISe) acceptor center with the energy level located at 0.52 eV above the valence band edge is
proposed, and the mechanism of the formation of this yellow PL band under direct and indirect
excitation is discussed.