ELECTRONIC STRUCTURE AND STRUCTURAL DEFECTS IN 3d-METAL DOPED In2O3

Zhidkov, I. S.; Kurmaev, E. Z.; Boukhvalov, D. W.; Brinzari, Vladimir; Cholakh, S. O.; Kukharenko, A. I.; Leedahl, B.; Becker, J.; Moewes, A.; Ho, J.; Gavrilov, N. V.

dc.contributor.author	Ho, J.
dc.contributor.author	Becker, J.
dc.contributor.author	Leedahl, B.
dc.contributor.author	Boukhvalov, D. W.
dc.contributor.author	Zhidkov, I. S.
dc.contributor.author	Kukharenko, A. I.
dc.contributor.author	Kurmaev, E. Z.
dc.contributor.author	Cholakh, S. O.
dc.contributor.author	Gavrilov, N. V.
dc.contributor.author	Brinzari, Vladimir
dc.contributor.author	Moewes, A.
dc.date.accessioned	2021-12-03T09:53:56Z
dc.date.available	2021-12-03T09:53:56Z
dc.date.issued	2019
dc.identifier.citation	HO, J., BECKER, J. et al. Electronic structure and structural defects in 3d-metal doped In2O3. In: Journal of Materials Science: Materials in Electronics. 2019, Vol. 30, Issue 15, pp. 14091–14098. ISSN 0957-4522.	en
dc.identifier.issn	0957-4522
dc.identifier.uri	https://link.springer.com/article/10.1007/s10854-019-01775-2
dc.identifier.uri	http://dspace.usm.md:8080/xmlui/handle/123456789/5086
dc.description.abstract	Dilute magnetic semiconductors (DMSs) are a highly attractive field of research due to their potential to open new technological functionality. Here, we perform a systematic study of In2O3 thin films with dopant ions of Mn, Co, Ni, and Fe to investigate the unique interaction of each of these ions and their incorporation into the semiconductor lattice. We report substitutional positioning of Fe atoms into the In3+ site and a mixture of interstitial, metallic clustering, and substitutional positioning for Co, Mn, and Ni, discriminating between oxidation states for all dopant atoms.	en
dc.language.iso	en	en
dc.publisher	Springer	en
dc.subject	dilute magnetic semiconductors	en
dc.subject	semiconductor	en
dc.title	ELECTRONIC STRUCTURE AND STRUCTURAL DEFECTS IN 3d-METAL DOPED In2O3	en
dc.type	Article	en