RESONANT TUNNELING AND QUANTUM CASCADING FOR OPTIMUM ROOM-TEMPERATURE GENERATION OF THz SIGNALS

Sirkeli, Vadim; Yilmazoglu, Oktay

dc.contributor.author	Sirkeli, Vadim
dc.contributor.author	Yilmazoglu, Oktay
dc.date.accessioned	2021-11-22T09:49:35Z
dc.date.available	2021-11-22T09:49:35Z
dc.date.issued	2017
dc.identifier.citation	SIRKELI, Vadim, YILMAZOGLU, Oktay et al. Resonant tunneling and quantum cascading for optimum room-temperature generation of THz signals. In: IEEE Transactions on Electron Devices. 2017, Vol.64, Issue 8, pp. 3482 - 3488. ISSN 0018-9383.	en
dc.identifier.issn	0018-9383
dc.identifier.uri	http://dspace.usm.md:8080/xmlui/handle/123456789/5017
dc.identifier.uri	https://ieeexplore.ieee.org/abstract/document/7968341/keywords#keywords
dc.description.abstract	We report on the results of a numerical study of quantum transport in ZnSe-based resonant-tunneling diodes (RTDs) and quantum cascade oscillators (QCOs) with fixed and unequal barrier heights. It is found that the negative differential resistance exists up to room temperature in the current-voltage characteristics of the RTD and QCO devices with unequal barrier heights. Further, we demonstrate that QCOs with unequal barrier heights have a better frequency and power performance characteristics compared with RTDs and are more beneficial for high-power terahertz generation at room temperature. For the best QCO device with 100 periods of quantum cascading, a maximum output power of ~7-9 μW for the operating frequency range from 0.1 to ~6 THz at room temperature was achieved.	en
dc.language.iso	en	en
dc.publisher	Institute of Electrical and Electronics Engineers	en
dc.subject	semiconductor devices	en
dc.subject	quantum well devices	en
dc.subject	resonant tunneling devices	en
dc.subject	terahertz (THz) radiation	en
dc.title	RESONANT TUNNELING AND QUANTUM CASCADING FOR OPTIMUM ROOM-TEMPERATURE GENERATION OF THz SIGNALS	en
dc.type	Article	en