TRANZIŢII EXCITONICE INDIRECTE ÎN CRISTALELE DE GaSe:Cd

Dmitroglo, Liliana

dc.contributor.author	Dmitroglo, Liliana
dc.date.accessioned	2021-06-21T10:11:18Z
dc.date.available	2021-06-21T10:11:18Z
dc.date.issued	2011
dc.identifier.citation	DMITROGLO, Liliana. Tranziţii excitonice indirecte în cristalele de GaSe:Cd. In: Studia Universitatis Moldaviae. Seria Ştiinţe Exacte şi Economice: Matematică. Informatică. Fizică. Economie. Revistă științifică. 2011, nr. 7(47), pp. 112-116. ISSN 1857-2073.	en
dc.identifier.issn	1857-2073
dc.identifier.uri	http://studiamsu.eu/nr-7-47-2011/
dc.identifier.uri	http://dspace.usm.md:8080/xmlui/handle/123456789/4482
dc.description.abstract	The investigation of indirect excitonic transitions in GaSe:Cd crystals, grown by Bridgman method is brought in this paper. The gallium selenide doping with cadmium atoms was carried out during the synthesis process. At GaSe doping with 0,5% at of Cd the majority charge carriers are holes with the concentration of 6,0·1015 cm-3. The GaSe undoped crystals indirect band ga pat the temperatures of 298 K and 77K equals to 1,920 eV and 2,008 eV accordingly. Cd forms in ε-GaSe compound band gap at acceptor leve lat 0,116 eV under he valence band top.	en
dc.language.iso	ro	en
dc.publisher	CEP USM	en
dc.subject	cristale de GaSe	en
dc.subject	tranziții excitonice	en
dc.title	TRANZIŢII EXCITONICE INDIRECTE ÎN CRISTALELE DE GaSe:Cd	en
dc.type	Article	en