Abstract:
The surface structure of AIN layers deposited on the Silicon substrates at the initial stage of germination was studied by the Atomic Force Microscopy (AFM) method. The layers have been deposited by the Hydride Vapor Phase Epitaxy (HVPE) at 1100o C. It was determined that: a) germination follows the 3D model; b) mechanisms of layers growth are
changing at the initial deposition stage; c) layers relief can be described in the approximation of a polynomial with elementary Gauss functions as arguments.
