OPTICAL AND PHOTOELECTRIC PROPERTIES OF NANOLAMELLAR STRUCTURES OBTAINED BY THERMAL ANNEALING OF INSE PLATES IN Zn VAPOURS

Untila, Dumitru; Evtodiev, Igor; Caraman, Mihail; Caraman, Iuliana; Dmitroglo, Liliana; Spalatu, Nicolae

dc.contributor.author	Untila, Dumitru
dc.contributor.author	Evtodiev, Igor
dc.contributor.author	Caraman, Iuliana
dc.contributor.author	Spalatu, Nicolae
dc.contributor.author	Dmitroglo, Liliana
dc.contributor.author	Caraman, Mihail
dc.date.accessioned	2021-04-09T09:29:49Z
dc.date.available	2021-04-09T09:29:49Z
dc.date.issued	2018
dc.identifier.citation	UNTILA, Dumitru, EVTODIEV, Igor, CARAMAN, Iuliana et al. Optical and Photoelectric Properties of Nanolamellar Structures Obtained by Thermal Annealing of InSe Plates in Zn Vapours. In: Physica Status Solidi (A). 2018, Vol. 215, Issue 4. ISSN 1862-6300.	en
dc.identifier.issn	1862-6300
dc.identifier.uri	http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1862-6319
dc.identifier.uri	http://dspace.usm.md:8080/xmlui/handle/123456789/4103
dc.description.abstract	The structural, optical and photoelectric properties of InSe crystals grown by Bridgman–Stockbarger method and ZnSe/InSe structures obtained on InSe by thermal annealing in Zn vapours are studied in this paper. The study of structural properties confirms that ZnSe compound is formed. The analysis of photoelectric properties reveal that both the ZnSe‐InSe composite layer and the composite/InSe heterojunction are photosensitive in the VIS‐NIR spectral region.	en
dc.language.iso	en	en
dc.subject	semiconductor	en
dc.subject	nanostructures	en
dc.title	OPTICAL AND PHOTOELECTRIC PROPERTIES OF NANOLAMELLAR STRUCTURES OBTAINED BY THERMAL ANNEALING OF INSE PLATES IN Zn VAPOURS	en
dc.type	Article	en