SELF-ABSORPTION OF VIOLET RADIATION IN ZnO THIN FILMS PRODUCED ON ZnSe CRYSTAL SURFACES BY ISOVALENT SUBSTITUTION METHOD

Dementiev, I.V.; Goncearenco, E.P.; Nedeoglo, Dmitrii; Goglidze, T.I.; Covali, A.V.; Nedeoglo, Natalia

dc.contributor.author	Goglidze, T.I.
dc.contributor.author	Dementiev, I.V.
dc.contributor.author	Covali, A.V.
dc.contributor.author	Goncearenco, E.P.
dc.contributor.author	Nedeoglo, Natalia
dc.contributor.author	Nedeoglo, Dmitrii
dc.date.accessioned	2021-04-09T08:53:26Z
dc.date.available	2021-04-09T08:53:26Z
dc.date.issued	2018
dc.identifier.citation	DEMENTIEV, I.V., COVALI, A.V., NEDEOGLO, N.D. et al. Self-absorption of violet radiation in ZnO thin films produced on ZnSe crystal surfaces by isovalent substitution method. In: Journal of Luminescence.2018, Vol.197, pp. 396-398. ISSN 0022-2313.	en
dc.identifier.issn	0022-2313
dc.identifier.uri	http://www.journals.elsevier.com/journal-of-luminescence/
dc.identifier.uri	http://dspace.usm.md:8080/xmlui/handle/123456789/4102
dc.description.abstract	Photoluminescence (PL) spectra of ZnO thin films produced by isovalent substitution method by means of thermal treatment of zinc selenide single crystal substrates in air are studied in 350 – 750 nm range at room temperature. Irrespective of annealing temperature (500 – 870 °C) and annealing time (20 – 120 min), PL spectra consist of a short-wavelength violet radiation with maximum localized between 396 and 423 nm and a long-wavelength yellow-orange radiation with maximum localized between 575 and 600 nm. Both PL bands are attributed to donor-acceptor (DA) pairs. It is shown that the violet PL band intensity decreases and the yellow-orange PL band intensity increases with increasing ZnO film thickness that is caused by self-absorption of the short-wavelength radiation and energy transmission to DA-pair centres of the long-wavelength radiation.	en
dc.language.iso	en	en
dc.publisher	Elsevier	en
dc.subject	photoluminescence spectra	en
dc.title	SELF-ABSORPTION OF VIOLET RADIATION IN ZnO THIN FILMS PRODUCED ON ZnSe CRYSTAL SURFACES BY ISOVALENT SUBSTITUTION METHOD	en
dc.type	Article	en