THE EFFECT OF Cu AND ANNEALING TREATMENTS ON CdS/CdTe HETEROSTRUCTURES STUDIED WITH QE AND PHOTOCURRENT RELAXATION TECHNIQUES

Gasin, P. A.; Vatavu, Sergiu; Caraman, Iu. M.; Morel, D. L.; Ferekides, C. S.; Zhao, H.

dc.contributor.author	Zhao, H.
dc.contributor.author	Vatavu, Sergiu
dc.contributor.author	Caraman, Iu. M.
dc.contributor.author	Gasin, P. A.
dc.contributor.author	Morel, D. L.
dc.contributor.author	Ferekides, C. S.
dc.date.accessioned	2021-02-24T09:56:12Z
dc.date.available	2021-02-24T09:56:12Z
dc.date.issued	2008
dc.identifier.citation	H. Zhao, S. A. Vatavu, I. M. Caraman, P. A. Gasin, D. L. Morel and C. S. Ferekides, "The effect of Cu and annealing treatments on CdS/CdTe heterostructures studied with QE and photocurrent relaxation techniques," 2008 33rd IEEE Photovoltaic Specialists Conference, San Diego, CA, USA, 2008, pp. 1-5, doi: 10.1109/PVSC.2008.4922556.	en
dc.identifier.uri	https://ieeexplore.ieee.org/document/4922556
dc.identifier.uri	http://dspace.usm.md:8080/xmlui/handle/123456789/3847
dc.description.abstract	The photo-emf (photocurrent) decay al light impulses excitation (in longitudinal configuration) has been used to determine the lifetime of the non-equilibrium charge carriers recombining in different regions of the CdS/CdTe Cu containing heterojunction at different temperatures and biases. The photosensitivity spectral distributions have been investigated for samples with different technological variations.	en
dc.language.iso	en	en
dc.publisher	IEEE	en
dc.subject	heterojunctions	en
dc.subject	electric vehicles	en
dc.title	THE EFFECT OF Cu AND ANNEALING TREATMENTS ON CdS/CdTe HETEROSTRUCTURES STUDIED WITH QE AND PHOTOCURRENT RELAXATION TECHNIQUES	en
dc.type	Article	en