STOICHIOMETRIC EFFECTS IN POLYCRYSTALLINE CDTE

Collins, S.; Ferekides, C.; Vatavu, Sergiu; Bakhshi, S.; Kendre, V.; Bane, P.; Morel, D.; Evani, V.; Palekis, V.; Khan, M.

dc.contributor.author	Khan, M.
dc.contributor.author	Evani, V.
dc.contributor.author	Collins, S.
dc.contributor.author	Palekis, V.
dc.contributor.author	Bane, P.
dc.contributor.author	Bakhshi, S.
dc.contributor.author	Kendre, V.
dc.contributor.author	Vatavu, Sergiu
dc.contributor.author	Morel, D.
dc.contributor.author	Ferekides, C.
dc.date.accessioned	2021-02-23T11:57:07Z
dc.date.available	2021-02-23T11:57:07Z
dc.date.issued	2014
dc.identifier.citation	M. Khan et al., "Stoichiometric effects in polycrystalline CdTe," 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC), Denver, CO, USA, 2014, pp. 2343-2347, doi: 10.1109/PVSC.2014.6925397.	en
dc.identifier.uri	https://ieeexplore.ieee.org/document/6925397/citations?tabFilter=papers#citations
dc.identifier.uri	http://dspace.usm.md:8080/xmlui/handle/123456789/3843
dc.description.abstract	The effect of the vapor phase Cadmium (Cd) to Tellurium (Te) ratio on the electronic properties of CdTe films is being studied. The stoichiometry of CdTe films is being altered by varying the gas phase Cd/Te ratio during the Elemental Vapor Transport (EVT) deposition process. Resistivity-temperature measurements and solar cells made with polycrystalline EVT-CdTe suggest changes in the native cadmium vacancy (V Cd ) concentration and carrier lifetime. The findings are in good agreement with the recently updated defect levels using the HSE approximation. Photoluminescence (PL) analysis has also demonstrated variation in the formation of defect complexes with the Cd/Te ratio. 2-Photon TRPL lifetime measurements showed improved minority-carrier lifetime for CdCl 2 treated samples deposited at low Cd/Te ratios.	en
dc.language.iso	en	en
dc.publisher	IEEE	en
dc.title	STOICHIOMETRIC EFFECTS IN POLYCRYSTALLINE CDTE	en
dc.type	Article	en