RADIATIVE RECOMBINATION MECHANISMS IN CDTE THIN FILMS DEPOSITED BY ELEMENTAL VAPOR TRANSPORT

Rotaru, Corneliu; Vatavu, Sergiu; Palekis, Vasilios; Bakhsh, Sara; Ferekides, Chris; Collins, Shamara; Khan, Md; Evani, Vamsi

dc.contributor.author	Collins, Shamara
dc.contributor.author	Vatavu, Sergiu
dc.contributor.author	Evani, Vamsi
dc.contributor.author	Khan, Md
dc.contributor.author	Bakhsh, Sara
dc.contributor.author	Palekis, Vasilios
dc.contributor.author	Rotaru, Corneliu
dc.contributor.author	Ferekides, Chris
dc.date.accessioned	2021-02-23T10:51:38Z
dc.date.available	2021-02-23T10:51:38Z
dc.date.issued	2015
dc.identifier.citation	COLINS, Shamara, VATAVU, Sergiu, EVANI, Vamsi et al. Radiative recombination mechanisms in CdTe thin films deposited by elemental vapor transport. In: Thin Solid Films. 2015, Vol. 582, pp. 139-145. ISSN 0040 - 6090.	en
dc.identifier.issn	0040-6090
dc.identifier.uri	https://doi.org/10.1016/j.tsf.2014.11.088
dc.identifier.uri	http://dspace.usm.md:8080/xmlui/handle/123456789/3840
dc.description.abstract	A photoluminesence (PL) study of the radiative recombination mechanisms for CdTe films deposited under different Cd and Te overpressure by elemental vapor transport is presented. The experiment and analysis have been carried out in the temperature range of 12–130 K. The intensity of the PL laser excitation beam was varied by two orders of magnitude. It has been established that the bands in the 1.47–1.50 eV are determined by transitions involving shallow D and A states and the 1.36x–1.37x eV band is due to band to level transitions. Deep transitions at 1.042 eV and 1.129 eV are due to radiative transitions to levels determined by CdTe native defects.	en
dc.language.iso	en	en
dc.publisher	Elsevier	en
dc.subject	cadmium telluride	en
dc.subject	photoluminescence	en
dc.subject	elemental vapor transport	en
dc.title	RADIATIVE RECOMBINATION MECHANISMS IN CDTE THIN FILMS DEPOSITED BY ELEMENTAL VAPOR TRANSPORT	en
dc.type	Article	en