STRUCTURAL AND OPTICAL PROPERTIES OF COMPOSITES CONTAINING A III B VI AND A II B VI SEMICONDUCTORS

Untila, Dumitru; Evtodiev, Igor; Caraman, Iuliana; Kantser, Valeriu; Dmitroglo, Liliana; Evtodiev, Silvia; Gasin, Petru; Rotaru, Irina

dc.contributor.author	Evtodiev, Igor
dc.contributor.author	Untila, Dumitru
dc.contributor.author	Evtodiev, Silvia
dc.contributor.author	Caraman, Iuliana
dc.contributor.author	Gasin, Petru
dc.contributor.author	Dmitroglo, Liliana
dc.contributor.author	Rotaru, Irina
dc.contributor.author	Kantser, Valeriu
dc.date.accessioned	2019-02-07T14:55:18Z
dc.date.available	2019-02-07T14:55:18Z
dc.date.issued	2017
dc.identifier.citation	Evtodiev, Ig. et al. Structural and optical properties of composites containing AIIBVI and AIIBVI semiconductors.In: Moldavian Journal of the Physical Sciences. 2017, nr. 3-4, pp.219-226. ISSN 1810-648X.	en
dc.identifier.issn	1810-648X
dc.identifier.uri	http://dspace.usm.md:8080/xmlui/handle/123456789/1948
dc.description.abstract	By thermal annealing of InSe, GaSe, and GaTe crystals in Zn vapors at 800, 870, and 1050K, respectively, a material consisting of ZnSe crystallites in both GaSe and InSe and ZnTe in GaTe has been prepared. Structural defects induced by intercalated atoms shield excitonic bonds in primary compounds and form both radiative recombination levels and electron trapping levels localized deep in the band gap of AIIIBVI crystals. The energies of trapping levels have been determined from thermally stimulated luminescence curves.	en
dc.description.sponsorship	Acknowledgements. This work was financially supported by Mo ldova State University through Institutional Grant no. 15.817.02.34A. One of the authors (D. Untila) would like to thank the European Commission for financial support through Erasmus+ Programme.	en
dc.language.iso	en	en
dc.subject	semiconductors	en
dc.subject	composite	en
dc.title	STRUCTURAL AND OPTICAL PROPERTIES OF COMPOSITES CONTAINING A III B VI AND A II B VI SEMICONDUCTORS	en
dc.type	Article	en