EXCITONIC ABSORPTION OF THE LIGHT IN HETEROJUNCTIONS Bi 2 O 3 -InSe

Evtodiev, Igor

dc.contributor.author	Evtodiev, Igor
dc.date.accessioned	2018-07-06T09:19:49Z
dc.date.available	2018-07-06T09:19:49Z
dc.date.issued	2009
dc.identifier.citation	EVTODIEV, Ig. Excitonic absorption of the light in heterojunctions Bi 2 O 3 -InSe. In: Moldavian Journal of the Physical Sciences. 2009, nr. 2, pp. 163-168. ISSN 1810-648X.	en
dc.identifier.issn	1810-648X
dc.identifier.uri	http://dspace.usm.md:8080/xmlui/handle/123456789/1763
dc.description.abstract	The interface layer of the Bi2O3/InSe:Cd (0.10 at. %) heterojunction was investigated using optical and electroreflection spectra. The fundamental absorption edge of InSe:Cd interface layer, at 78 K, is formed by the excitonic absorption band n=1, with maximum at 1.328eV. Its direct optical band gap corresponds to electron transitions at the M point of the Brillouin zone, and is equal to 2.557 eV at 78 K.	en
dc.language.iso	en	en
dc.subject	semiconductor	en
dc.title	EXCITONIC ABSORPTION OF THE LIGHT IN HETEROJUNCTIONS Bi 2 O 3 -InSe	en
dc.type	Article	en