Abstract:
The transition of plane surface of liquid dielectric charged with the electrical charge in
the electrostatic field in the periodical gofer surface of crater type deformation is researched. It was proved for the first time that the apparition of dissipative structures keeps not optical character but thermal and is not conditioned by the presence of the photo sensible semiconductor layer. It was esta
blished that the development of dissipative structures on the surface of dielectric liquid includes in itself the mechanism of initiation of germination
deformations and a mechanism of multiplication
of the centers of new deformations in the
free volume of germination deformation.
