PHOTOLUMINESCENCE OF n-ZnSe SINGLE CRYSTALS DOPED WITH IODINE  BY VAPOUR PHASE DIFFUSION

Avdonin, A.N.; Sirkeli, Vadim; Ivanova, G.N.; Nedeoglo, Dmitrii; Nedeoglo, Natalia

dc.contributor.author	Avdonin, A.N.
dc.contributor.author	Nedeoglo, Dmitrii
dc.contributor.author	Nedeoglo, Natalia
dc.contributor.author	Sirkeli, Vadim
dc.contributor.author	Ivanova, G.N.
dc.date.accessioned	2018-04-21T12:03:30Z
dc.date.available	2018-04-21T12:03:30Z
dc.date.issued	2006
dc.identifier.citation	AVDONIN, A.N., IVANOVA, G.N. et al. Photoluminescence of n-ZnSe single crystals doped with iodine by vapour phase diffusion. In: Moldavian Journal of the Physical Sciences. 2006, nr. 1, pp. 23-26. ISSN 1810-648X.	en
dc.identifier.issn	1810-648X
dc.identifier.uri	http://dspace.usm.md:8080/xmlui/handle/123456789/1741
dc.description.abstract	Photoluminescence spectra of n-ZnSe single crystals doped with iodine are investigated in the temperature range from 83 to 300 K. It is shown that the edge PL band is formed by overlapping of the PL lines attributed to ISe donor-bound ecxitons (I2I) and VZn acceptorbound excitons (D1I). A model of radiation mechanisms, which explain the redistribution of the edge and long-wave PL bands intensities with increasing doping level of the samples, is proposed.	en
dc.language.iso	en	en
dc.subject	photoluminescence spectra	en
dc.title	PHOTOLUMINESCENCE OF n-ZnSe SINGLE CRYSTALS DOPED WITH IODINE BY VAPOUR PHASE DIFFUSION	en
dc.type	Article	en