IMPURITY DISTRIBUTION IN n-ZnSe CRYSTALS DOPED WITH Au

Sirkeli, Vadim; Nedeoglo, Dmitrii; Nedeoglo, Natalia

dc.contributor.author	Nedeoglo, Dmitrii
dc.contributor.author	Nedeoglo, Natalia
dc.contributor.author	Sirkeli, Vadim
dc.date.accessioned	2018-04-11T13:07:23Z
dc.date.available	2018-04-11T13:07:23Z
dc.date.issued	2005
dc.identifier.citation	NEDEOGLO, D.D., NEDEOGLO, N.D., SIRKELI, V.P. Impurity distribution in n-ZnSe crystals doped with Au. In: Moldavian Journal of the Physical Sciences. 2005, nr.4 , pp. 435-437. ISSN 1810-648X.	en
dc.identifier.issn	1810-648X
dc.identifier.uri	http://dspace.usm.md:8080/xmlui/handle/123456789/1738
dc.description.abstract	Hall effect, electric conductivity and mobility of charge carriers in n-ZnSe single crystals doped with Au are investigated in the temperature range from 77 to 300 K. Impurity distribution in the crystals was studied by a method of “layer-by-layer” etching of a sample surface. The model, which explains this distribution by a simultaneous diffusion of Zn and Au atoms during a long-term high-temperature annealing of as-grown crystals in Zn + Au melt, is proposed.	en
dc.language.iso	en	en
dc.subject	crystals doped	en
dc.title	IMPURITY DISTRIBUTION IN n-ZnSe CRYSTALS DOPED WITH Au	en
dc.type	Article	en