dc.contributor.author |
Gurau, Virginia |
|
dc.date.accessioned |
2018-03-30T08:46:51Z |
|
dc.date.available |
2018-03-30T08:46:51Z |
|
dc.date.issued |
2005 |
|
dc.identifier.citation |
GURAU, V. Laser gain spectra of quantum wells and multiplasmon optical transitions. In: Moldavian Journal of the Physical Sciences. 2005, nr. 1, pp. 119-121. ISSN 1810-648X. |
en |
dc.identifier.issn |
1810-648X |
|
dc.identifier.uri |
http://dspace.usm.md:8080/xmlui/handle/123456789/1734 |
|
dc.description.abstract |
A novel multi-plasmon concept of a light absorption and laser gain of low-
dimensional structures are comprehensively discussed. A
Generalized Semiconductor Bloch Equations are
derived with account of multi-plasmon optical transitions in direct gap quantum
wells, using the cumulant expansion method and fluctuation-dissipation theorem. We present results of computer simulations concerning gain spectra of In
0.05Ga0.95As quantum wells with
account of multi-plasmon optical transitions in two- dimensional systems.Multi
-quantum LO-phonon-plasmon optical transitions are investigated with account of coherent memory effects in quantum wells. It is shown that a red shift of the absorption edge can be caused, not only by known mechanism of band gap shrinkage, but also by multi-plasmon transitions. The electron-hole plasma properties in the active region of the laser device and its
interaction with the optical field are studied on a microscopic level using obtained Generalized Semiconductor Bloch Equations.The comparison
with other theories and experimental data measured in In0.05Ga0.95As quantum
wells is performed. The gain value g=50 cm-1 in 8 nm In 0.05Ga0.95As quantum wells is obtained at a surface density of electrons nd0=1.64 10-12 cm-2. |
en |
dc.language.iso |
en |
en |
dc.subject |
multiplasmon |
en |
dc.title |
LASER GAIN SPECTRA OF QUANTUM WELLS AND MULTIPLASMON OPTICAL TRANSITIONS |
en |
dc.type |
Article |
en |