MODELING OF TEMPERATURE REGIMES OF THIN FILM GAS SENSITIVE  DEVICES

Dmitriev, Serghei

dc.contributor.author	Dmitriev, Serghei
dc.date.accessioned	2018-03-29T10:23:49Z
dc.date.available	2018-03-29T10:23:49Z
dc.date.issued	2005
dc.identifier.citation	DMITRIEV, S. Modeling of temperature regimes of thin film gas sensitive devices. In: Moldavian Journal of the Physical Sciences. 2005, nr. 1, pp. 90-93. ISSN 1810-648X.	en
dc.identifier.issn	1810-648X
dc.identifier.uri	http://dspace.usm.md:8080/xmlui/handle/123456789/1731
dc.description.abstract	This paper presents results of the modeling of the temperature distribution in a chip of thin film gas sensor, operating at high temperatures (150-1000 oC), required to provide high sensitivity and selectivity to target gases. Analysis of thermal regimes of such chip was carried out on the base of model of plate with local source of heat. It was found that substrate heat conductivity is most influencing parameter, determining both temperature distribution in chip and also the electrical power consumption decreasing. The example of realized chips designed in accordance with results of modeling is presented. The results of modeling are compared with experimental data.	en
dc.language.iso	en	en
dc.subject	thin film	en
dc.title	MODELING OF TEMPERATURE REGIMES OF THIN FILM GAS SENSITIVE DEVICES	en
dc.type	Article	en