Abstract:
A new composite material composed of GaSe and CdSe has been obtained by treatment of GaSe single-crystal lamellas in Cd vapors at temperatures of 773 853 K and intercalation of Cd interlayers. The struc
ture and optical properties of the GaSe-CdSe composite material have been
studied. The content of CdSe crystallites was found to grow with increasing treatment
temperature or with increasing duration of treatment at a constant temperature. Analysis of XRD,
PL, XPS, AFM, and Raman patterns has shown that the heterogeneous composite composed of
micro and nanocrystallites of CdSe in GaSe can be obtained by Cd intercalation in a temperature
range of 753
853 K. On the basis of Raman spectrum, the vibrational m
odes of the composite
have been identified. The PL of these materials contains emission bands of free and bound
excitons, donor
-
acceptor bands, and bands of recombination via impurity levels. The PL emission
spectra measured at a temperature of 78 and 300
K for the composites result from the overlapping
of the emission bands of the components of GaSe doped with Cd and the CdSe crystallites
.
