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Browsing by Author "Yilmazoglu, Oktay"

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EFFECT OF p-NiO AND n-ZnSe INTERLAYERS ON THE EFFICIENCY OF p-GaN/n-ZnO LIGHT-EMITTING DIODE STRUCTURES

Sirkeli, Vadim; Yilmazoglu, Oktay; Küppers, Franko; Hartnagel, Hans (IOP Publishing Ltd, 2015)

We report on a numerical study of the characteristics of p-GaN/n-ZnO light-emitting diodes (LEDs) with p-NiO and n-ZnSe interlayers, and on LED design optimization which includes bandgap engineering, thickness and doping ...
EFFECT OF p-NiO INTERLAYER ON INTERNAL QUANTUM EFFICIENCY OF p-GaN/n-ZnO LIGHT-EMITTING DEVICES

Sirkeli, Vadim; Yilmazoglu, Oktay; Küppers, Franko; Hartnagel, Hans (American Scientific Publishers, 2015)

We report on numerical investigations of p-GaN/n-ZnO light-emitting devices with p-NiO interlayer, and on LED design optimization which includes bandgap engineering, thickness and doping of constituent layers. The ...
ENHANCED RESPONSIVITY OF ZnSe-BASEDMETAL–SEMICONDUCTOR–METAL NEAR-ULTRAVIOLETPHOTODETECTOR VIA IMPACT IONIZATION

Sirkeli, Vadim; Yilmazoglu, Oktay; Hajo, Ahid S.; Nedeoglo, Natalia; Nedeoglo, Dmitrii; Preu, Sascha; Küppers, Franko; Hartnagel, Hans (Willey, 2018)

We report on high‐responsivity, fast near‐ultraviolet photodetectors based on bulk ZnSe employing a metal–semiconductor–metal structure with and without interdigital contacts. A very high responsivity of 2.42 and 4.44 A W−1 ...
NEGATIVE DIFFERENTIAL RESISTANCE IN ZnO-BASED RESONANT TUNNELING DIODES

Sirkeli, Vadim; Vatavu, Sergiu; Yilmazoglu, Oktay; Preu, Sascha; Hartnagel, Hans (IEEE, 2019)

We present the results of a simulation study of resonant tunneling transport of non-polar m-plane ZnO/ZnMgO quantum structures with double and triple quantum barriers. It is found that in current density-voltage characteristics ...
PROPOSAL FOR A MONOLITHIC BROADBAND TERAHERTZ QUANTUM CASCADE LASER ARRAY TAILORED TO DETECTION OF EXPLOSIVE MATERIALS

Sirkeli, Vadim; Yilmazoglu, Oktay (American Scientific Publishers, 2018)

Since most tunable THz sources produce only small power levels, we propose for routine evaluation of dangerous materials to employ a chain of quantum cascade THz generators, where each of them addresses a specific spectroscopic ...
RECENT ADVANCES IN ZnSe-BASED DEVICES: FROM UV TO TERAHERTZ APPLICATIONS

Sirkeli, Vadim P.; Nedeoglo, Natalia D; Nedeoglo, Dmitrii D.; Vatavu, Sergiu A.; Yilmazoglu, Oktay; Hajo, Ahid S.; Preu, Sascha; Hartnagel, Hans L.; Küppers, Franko (CEP USM, 2024)

Zinc selenide is a II-VI compound material with wide bandgap. Due to its unique properties like direct wide bandgap, high resistance to intense UV and X-Ray radiation, ZnSe is attractive material for fabrication of ...
RESONANT TUNNELING AND QUANTUM CASCADING FOR OPTIMUM ROOM-TEMPERATURE GENERATION OF THz SIGNALS

Sirkeli, Vadim; Yilmazoglu, Oktay (Institute of Electrical and Electronics Engineers, 2017)

We report on the results of a numerical study of quantum transport in ZnSe-based resonant-tunneling diodes (RTDs) and quantum cascade oscillators (QCOs) with fixed and unequal barrier heights. It is found that the negative ...
ZnSe-BASED SOLAR-BLIND ULTRAVIOLET PHOTODETECTORS WITH DIFFERENT SCHOTTKY CONTACT METALS

Sirkeli, Vadim; Nedeoglo, Natalia; Nedeoglo, Dmitrii; Yilmazoglu, Oktay; Hajo, Ahid; Preu, Sascha; Kuppers, Franko; Hartnagel, Hans (CEP USM, 2021)

We report on the selection of contact metallisations for ZnSe-based metal-semiconductor-metal ultraviolet photode- tectors. Our evaluation is based on Ni/Au, Cr/Au, and hybrid Ag-nanowire contacts. Low values of dark ...

Now showing items 1-8 of 8

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